Ferroelectric field-effect memory device using Bi 4Ti 3O 12 film. The past, the present, and the future of ferroelectric memories. Why is nonvolatile ferroelectric memory field-effect transistor still elusive? IEEE Electron Device Lett. We argue that the ferroelectric field-effect transistors can be a key hardware component in the future of computing, providing a new approach to electronics that we term ferroelectronics. We highlight the material- and device-level challenges involved in high-volume manufacturing in advanced technology nodes (≤10 nm), which are reminiscent of those encountered in the early days of high- K-metal-gate transistor development. Here, we examine the potential of the ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models. In doing so, it merges logic and memory functionalities at the single-device level, delivering some of the most pressing hardware-level demands for emerging computing paradigms. A ferroelectric field-effect transistor combines a ferroelectric material with a semiconductor in a transistor structure.
In 1946 physicist John Bardeen calculated that surface effects could account for the failure of these attempts to build working devices.The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. Again he failed to achieve his predicted results. On his return to Bell Labs after the war in 1945 Shockley resumed his work on semiconductor devices. Stimulated by research into copper-oxide rectifiers at Bell Telephone Laboratories and by explanations of semiconductor rectification by Mott and Schottky (1931 Milestone), William Shockley wrote in December 1939 that "It has today occurred to me that an amplifier using semi conductors rather than vacuum is in principle possible." Under his direction, Walter Brattain and others performed experiments on such three-electrode devices but did not achieve amplification. They reported amplification of low-frequency (about 1 Hz) signals, but their research did not lead to any applications. In 1938 Robert Pohl and Rudolf Hilsch experimented on potassium-bromide crystals with three electrodes at Gottingen University, Germany. Although both patents were granted, no records exist to prove that Heil or Lilienfeld actually constructed functioning devices. While working at Cambridge University in 1934, German electrical engineer and inventor Oskar Heil filed a patent on controlling current flow in a semiconductor via capacitive coupling at an electrode - essentially a field-effect transistor. Today this device would be called a field-effect transistor. Lilienfeld filed a patent in 1926, "Method and Apparatus for Controlling Electric Currents," in which he proposed a three-electrode structure using copper-sulfide semiconductor material. Polish-American physicist and inventor Julius E.
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